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參數資料
| 型號： | 2SJ181(L) |
| 元件分類： | JFETs |
| 英文描述： | 25 ohm, POWER, FET |
| 封裝： | DPAK-3 |
| 文件頁數： | 7/11頁 |
| 文件大小： | 50K |
| 代理商： | 2SJ181(L) |
2SJ181(L), 2SJ181(S)
5
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
2
1
0.2
0.5
0.1
0.02
0.05
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
V
= –20 V
Pulse Test
DS
Tc = –25 °C
75 °C
25 °C
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
1000
200
500
100
20
50
10
–0.05 –0.1 –0.2
–0.5
–1
–2
–5
di / dt = 100 A / s
V
= 0, Ta = 25 °C
GS
0
–10
–20
–30
-40
–50
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
1000
300
100
30
10
3
1
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ181(S) | 25 ohm, POWER, FET |
| 2SJ181STL-E | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ181S | 0.5 A, 600 V, 25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ185 | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ187(JA) | 1000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ181-L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ181L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ181S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:P-Channel MOS FET For High-Speed Switching |
| 2SJ181STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ181STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
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