參數(shù)資料
型號(hào): 2SJ162
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel MOS FET
中文描述: 硅P溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 40K
代理商: 2SJ162
2SJ160, 2SJ161, 2SJ162
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SJ160
V
(BR)DSX
–120
V
I
D
= –10 mA , V
GS
= 10 V
breakdown voltage
2SJ161
–140
V
2SJ162
–160
V
Gate to source breakdown
voltage
V
(BR)GSS
±
15
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
V
DS(sat)
–0.15
–1.45
V
I
D
= –100 mA, V
DS
= –10 V
I
D
= –7 A, V
GD
= 0*
1
Drain to source saturation
voltage
–12
V
Forward transfer admittance
|y
fs
|
Ciss
0.7
1.0
1.4
S
I
D
= –3 A, V
DS
= –10 V*
1
V
GS
= 5 V, V
DS
= –10V,
f = 1 MHz
Input capacitance
900
pF
Output capacitance
Coss
400
pF
Reverse transfer capacitance
Crss
40
pF
Turn-on time
t
on
t
off
230
ns
V
DD
= –20 V, I
D
= –4 A
Turn-off time
Note:
110
ns
1. Pulse test
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參數(shù)描述
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