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參數(shù)資料
| 型號： | 2SJ130S |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SJ130S |
2SJ130(L), 2SJ130(S)
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–300
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–1
A
Drain peak current
I
D(pulse)
–2
A
Body to drain diode reverse drain current
I
DR
–1
A
Channel dissipation
Pch*
1
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–300
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–100
AV
DS = –240 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
—
–4.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—
6.0
8.5
I
D = –0.5 A, VGS = –10 V*
1
Forward transfer admittance
|y
fs|
0.25
0.4
—
S
I
D = –0.5 A, VDS = –20 V*
1
Input capacitance
Ciss
—
235
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
65
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
16
—
pF
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = –0.5 A, VGS = –10 V,
Rise time
t
r
—
25
—
ns
R
L = 60
Turn-off delay time
t
d(off)
—35
—
ns
Fall time
t
f
—45
—
ns
Body to drain diode forward
voltage
V
DF
—
–0.9
—
V
I
F = –1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
200
—
ns
I
F = –1 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
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