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參數(shù)資料
| 型號： | 2SJ130L-E |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 86K |
| 代理商： | 2SJ130L-E |
2SJ130(L), 2SJ130(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–300
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–1
A
Drain peak current
ID (pulse)
–2
A
Body to drain diode reverse drain current
IDR
–1
A
Channel dissipation
Pch
Note 1
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–300
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–100
A
VDS = –240 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
—
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
6.0
8.5
ID = –0.5 A, VGS = –10 V
Note 2
Forward transfer admittance
|yfs|
0.25
0.4
—
S
ID = –0.5 A, VDS = –20 V
Note 2
Input capacitance
Ciss
—
235
—
pF
Output capacitance
Coss
—
65
—
pF
Reverse transfer capacitance
Crss
—
16
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
10
—
ns
Rise time
tr
—
25
—
ns
Turn-off delay time
td (off)
—
35
—
ns
Fall time
tf
—
45
—
ns
ID = –0.5 A
VGS = –10 V
RL = 60
Body to drain diode forward voltage
VDF
—
–0.9
—
V
IF = –1 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
200
—
ns
IF = –1 A, VGS = 0
diF/dt = 50 A/
s
Note:
2. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ130STL-E | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133-Z-AZ | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133 | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133-Z-T1 | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ133-Z-T2 | 2 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ130S | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon P-Channel MOS FET |
| 2SJ130STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ1315(L)(S).2SK1316(L)(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SJ132 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MOS Field Effect Power Transistors |
| 2SJ132-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO251 Bulk |
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