參數(shù)資料
型號: 2SJ103-GR
元件分類: 小信號晶體管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
封裝: 2-5F1C, SC-43, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 127K
代理商: 2SJ103-GR
2SJ103
2003-03-25
1
TOSHIBA Field Effect Transistor
Silicon P Channel Junction Type
2SJ103
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
Complimentary to 2SK246
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
-10
mA
Drain power dissipation
PD
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 mA
50
V
Drain current
IDSS
(Note)
VDS = -10 V, VGS = 0
-1.2
-14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = -10 V, ID = -0.1 mA
0.3
6.0
V
Forward transfer admittance
Yfs
VDS = -10 V, VGS = 0, f = 1 kHz
1.0
4.0
mS
Drain-source ON resistance
RDS (ON)
VDS = -10 mV, VGS = 0, IDSS = -5 mA
270
W
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
18
pF
Reverse transfer capacitance
Crss
VDG = -10 V, ID = 0, f = 1 MHz
3.6
pF
Note: IDSS classification Y: -1.2~-3.0 mA, GR: -2.6~-6.5 mA, BL: -6~-14 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
相關(guān)PDF資料
PDF描述
2SJ103-Y P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SJ185 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ185-T2B 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ185-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ185-A 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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