參數(shù)資料
型號(hào): 2SH29
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel IGBT High Speed Power Switching
中文描述: 硅?通道高速IGBT的功率開關(guān)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 43K
代理商: 2SH29
2SH29
3
Main Characteristics
C
Case Temperature Tc (
°
C)
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Reverse Bias SOA
Collector to Emitter Voltage V (V)
C
C
0
200
400
600
800
20
5
10
2
0.5
1
0.2
0.1
50
Tc = 25
°
C
100
Typical Output Characteristics
Collector to Emitter Voltage V (V)
C
50
40
30
20
10
0
2
4
6
8
10
V = 8 V
C
9 V
12 V
Pulse Test
15 V
11 V
10 V
Collector to Emitter Voltage V (V)
C
C
Maximum Safe Operation Area
100
30
10
1
3
10
30
100
3
1
0.3
0.1
0.03
0.01
300
1000
100
μ
s
1m
DCOeao T 5
°
C
Ta = 25
°
C
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參數(shù)描述
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