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參數(shù)資料
| 型號(hào)： | 2SH28 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel IGBT High Speed Power Switching |
| 中文描述： | 硅?通道高速IGBT的功率開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH28 |
2SH28
4
Gate to Emitter Voltage V (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
V
C
C
Collecot to Emitter Saturation Voltage
vs. Collector Current
10
Gate to Emitter Voltage V (V)
GE
C
C
Typical Transfer Characteristics
C
Collector to Emitter Voltage V (V)
Typical Capacitance vs.
Collecotor to Emitter Voltage
Collector Current I (A)
5
4
3
2
1
0
4
8
12
16
20
20
16
12
8
4
0
4
8
12
16
20
Tc = 75°C
25°C
–25°C
5 A
I = 20 A
V = 10 V
Pulse Test
Pulse Test
0.1
1
10
100
0.3
3
30
2
1
0.5
0.2
0.1
0
10
20
30
40
50
10000
300
1000
100
30
5
3
10
V = 0
f = 1 MHz
Cies
Coes
Cres
1
3000
V
C
C
–25°C
Tc = 75°C
25°C
V = 15 V
Pulse Test
10 A
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PDF描述 |
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| 2SH29 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | Silicon N Channel IGBT High Speed Power Switching |
| 2SJ113 | SILICON P-CHANNEL MOS FET |
| 2SJ116 | SILICON P-CHANNEL MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SHA04IDC | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
| 2SHA04TR | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
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