- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370095 > 2SH22 (Hitachi,Ltd.) Silicon N-Channel IGBT PDF資料下載
參數(shù)資料
| 型號： | 2SH22 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel IGBT |
| 中文描述： | 硅N溝道IGBT的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SH22 |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter breakdown
V
(BR)CES
600
voltage
———————————————————————————————————————————
Zero gate voltage collector
I
CES
—
current
———————————————————————————————————————————
Gate to emitter leak current
I
GES
—
———————————————————————————————————————————
Gate to emitter cutoff current
V
GE(off)
3.0
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
1
—
voltage
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
2
—
voltage
———————————————————————————————————————————
Input capacitance
Cies
—
Symbol
Min
Typ
Max
Unit Test conditions
—
—
V
I
C
= 100 μA, V
GE
= 0
—
0.5
mA
V
CE
= 600 V, V
GE
= 0
—
±1
μA
V
GE
= ±20 V, V
CE
= 0
—
6.0
V
I
C
= 1 mA, VCE= 10 V
1.5
—
V
I
C
= 35 A, V
GE
= 15 V
2.0
2.6**
V
I
C
= 75 A, V
GE
= 15 V
6200
—
pF
V
CE
= 10 V, V
GE
= 0,
f = 1 MHz
———————————————————————————————————————————
Switching time
t
r
—
————————————————
t
on
—
————————————————
t
f
—
————————————————
t
off
—
———————————————————————————————————————————
**VCE(sat)2 is specified at the correlated test condition (IC=50A)
700
—
ns
IC= 75 A,
900
—
RL= 4
,
2000
—
VGE= ±15 V
2800
—
Rg = 50
2
2SH22
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SH26 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH27 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | Silicon N Channel IGBT High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SH26 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH27 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。