參數(shù)資料
型號: 2SH13
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel IGBT
中文描述: 硅N溝道IGBT的
文件頁數(shù): 2/8頁
文件大?。?/td> 43K
代理商: 2SH13
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Collector to emitter breakdown
V
(BR)CES
600
voltage
———————————————————————————————————————————
Zero gate voltage collector
I
CES
current
———————————————————————————————————————————
Gate to emitter leak current
I
GES
———————————————————————————————————————————
Gate to emitter cutoff current
V
GE(off)
3.0
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
1
voltage
———————————————————————————————————————————
Collector to emitter saturation
V
CE(sat)
2
voltage
———————————————————————————————————————————
Input capacitance
Cies
Symbol
Min
Typ
Max
Unit Test conditions
V
I
C
= 100 μA, V
GE
= 0
0.5
mA
V
CE
= 600 V, V
GE
= 0
±1
μA
V
GE
= ±20 V, V
CE
= 0
5.0
V
I
C
= 1 mA, VCE= 10 V
2.0
V
I
C
= 10 A, V
GE
= 15 V
2.6
3.3
V
I
C
= 20 A, V
GE
= 15 V
1800
pF
V
CE
= 10 V, V
GE
= 0,
f = 1 MHz
———————————————————————————————————————————
Switching time
t
r
————————————————
t
on
————————————————
t
f
————————————————
t
off
———————————————————————————————————————————
130
ns
IC= 20 A,
210
RL= 15
,
300
600
VGE= ±15 V
500
1000
Rg = 50
2
2SH13
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