參數(shù)資料
型號(hào): 2SD958
廠商: PANASONIC CORP
元件分類(lèi): 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For high breakdown voltage and low-noise amplification)
中文描述: 20 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 37K
代理商: 2SD958
1
Transistor
2SD958
Silicon NPN epitaxial planer type
For high breakdown voltage and low-noise amplification
Complementary to 2SB788
I
Features
G
High collector to emitter voltage V
CEO
.
G
Low noise voltage NV.
G
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
6.9
±
0.1
0.55
±
0.1
0.45
±
0.05
1
±
0
1
2.5
±
0.1
1.0
1.5
1.5 R0.9
R0.9
R07
0
0.85
3
±
0
2
±
0
2
±
0
1
±
0
4
±
0
4
±
0
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
7
50
20
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 5V, I
E
= –2mA, f = 200MHz
V
CE
= 40V, I
C
= 2mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
120
120
7
180
typ
200
max
100
1
700
0.6
150
Unit
nA
μ
A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
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