參數(shù)資料
型號: 2SD882SG-E-AA3-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: HALOGEN FREE PACKAGE-4
文件頁數(shù): 2/4頁
文件大?。?/td> 143K
代理商: 2SD882SG-E-AA3-R
2SD882S
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R208-007,E
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
DC
IC
3
A
Collector Current
Pulse
ICP
7
A
Base Current
IB
0.6
A
SOT-223
1
W
SOT-89
0.5
W
Power Dissipation
TO-92
PD
0.75
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100μA, IE=0
40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC=0
5
V
Collector Cut-off Current
ICBO
VCB=30V, IE=0
1000
nA
Emitter Cut-off Current
IEBO
VEB=3V, IC=0
1000
nA
hFE1
VCE=2V, IC=20mA
30
200
DC Current Gain (Note 1)
hFE2
VCE=2V, IC=1A
100
150
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=0.2A
0.3
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=2A, IB=0.2A
1.0
2.0
V
Current Gain Bandwidth Product
fT
VCE=5V, IC=0.1A
80
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
45
pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
相關PDF資料
PDF描述
2SD882SG-E-AB3-R 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD882SG-P-T92-B 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SD882SG-E-T92-K 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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