參數(shù)資料
型號： 2SD882-R
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： Si, SMALL SIGNAL TRANSISTOR, TO-126
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 1/2頁
文件大小： 77K
代理商： 2SD882-R
2SD882
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
30
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
---
Adc
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0)
---
1.0
uAdc
ICEO
Collector Cutoff Current
(VCE=30Vdc, IB=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
---
1.0
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=1.0Adc, VCE=2.0Vdc)
60
400
---
hFE-2
DC Current Gain
(IC=100mAdc, VCE=2.0Vdc)
32
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.2Adc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.2Adc)
---
2.0
Vdc
f T
Transition Frequency
(VCE=5.0Vdc, IC=0.1Adc, f=10MHz)
50
---
MHz
CLASSIFICATION OF HFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400