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| 型號(hào)： | 2SD879 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | 2SD879 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1.5V, 3V Strobe Applications
Ordering number:EN550F
2SD879
21599TH (KT)/N1596TS (KOTO) 8-3475/5137KI/3075KI/5244KI, TS No.550–1/4
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2003B
[2SD879]
Features
In applications where two NiCd batteries are used to
provide 2.4V, two 2SD879s are used.
The charge time is approximately 1 second faster
than that of germanium transistors.
Less power dissipation because of low Collector-to-
Emitter Voltage VCE(sat), permitting more flashes of
light to be emitted.
Small package and large allowable collector dissipa-
tion (TO-92, PC=750mW).
Large current capacity and highly resistant to break-
down.
Excellent linearity of hFE in the region from low
current to high current.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-92
EIAJ
: SC-43
SANYO : NP
Continued on next page.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD879 | 3000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD880-GR-BP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880-Q-BP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880-Y-BP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD880L-TA3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD879_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879_2 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879G-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
| 2SD879G-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:1.5V, 3V STROBE APPLICATIONS |
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