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參數(shù)資料
| 型號： | 2SD875R |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-243 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 500mA的一（c）|至243 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 80K |
| 代理商： | 2SD875R |
2SD0814A
2
SJC00196CED
VCE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
IC VBE
Cob VCB
0
160
40
120
80
0
240
200
160
120
80
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
012
10
8
26
4
0
120
100
80
60
40
20
Ta
= 25°C
1.8 mA
1.6 mA
1.4 mA
1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
0.2 mA
IB
= 2.0 mA
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
02.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
VCE
= 10 V
Ta
= 75°C
25°C
25
°C
Base-emitter voltage V
BE (V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
IC / IB
= 10
25
°C
25°C
Ta
= 75°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (mA)
0.1
1
10
100
0
600
500
400
300
200
100
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (mA)
1
10
100
0
200
160
120
80
40
VCB
= 10 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
3
10
30
100
0
5
4
3
2
1
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
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| 2SD875S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-243 |
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| 2SD876Q | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Si NPN Epitaxial Planar |
| 2SD877 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-66 |
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