參數(shù)資料
型號(hào): 2SD843O
元件分類(lèi): 功率晶體管
英文描述: 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: 2-10A1A, SC-46, 3 PIN
文件頁(yè)數(shù): 5/5頁(yè)
文件大?。?/td> 250K
代理商: 2SD843O
10%
td(on)
10%
tr
90%
5%
T
Collector Current
Collector Voltage
Gate Voltage
T
J = 125 C
Switching Energy
5 %
T
TJ = 125 C
Collector Voltage
Collector Current
Gate Voltage
90%
t
f
t
d(off)
10%
Switching Energy
0
APT77N60JC3
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
050-7146
Rev
E
6-2004
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
IC
D.U.T.
APT30DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
相關(guān)PDF資料
PDF描述
2SD860AP 1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD860Q 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD860 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SD868 2.5 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3
2SD870 5 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3
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