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參數(shù)資料
| 型號： | 2SD820 |
| 廠商： | 永盛國際集團(tuán) |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 擴(kuò)散硅功率晶體管（一般）的說明 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 192K |
| 代理商： | 2SD820 |
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope , primarily for use in switching power
circuites of colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
MAX
1500
600
5
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 4.0A; I
B
= 0.8A
f = 16KHz
25
50
5
-
I
Csat
= 4.0A; f = 16KHz
1.0
s
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
MAX
1500
600
5
UNIT
V
V
A
A
A
A
W
-
-
-
-
1
Tmb
25
50
150
150
-55
-
SYMBOL
I
CE
I
CES
PARAMETER
Collector-emitter cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 4.0A; I
B
= 0.8A
I
C
= 4.0A; I
B
= 0.8A
I
C
= 1.0A; V
CE
= 5V
MIN
-
-
MAX
0.1
0.2
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
-
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
-
-
8
5
V
V
1.5
40
V
I
C
=1.0A; V
CE
= 10V
V
CB
= 10V
I
C
=4.0A,I
B1
=-I
B2
=0.8A,V
CC
=105V
I
C
=4.0A,I
B1
=-I
B2
=0.8A,V
CC
=105V
1.0
-
MHz
pF
165
-
1.0
s
s
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SD820
SILICON DIFFUSED POWER TRANSISTOR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD822 | NPN SILICON POWER TRANSISTOR |
| 2SD882E | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-126 |
| 2SD882P | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD882Q | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-126 |
| 2SD882 | NPN(for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD821 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SD822 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD823 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-220AB |
| 2SD826 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-1 60V 5A 10W ECB |
| 2SD826E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 |
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