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參數(shù)資料
| 型號(hào)： | 2SD768K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | 2SD768K |
2SD768(K)
3
Typical Output Characteristics
T
C
= 25
°
C
I
B
= 0
10
8
6
4
2
0
1
2
Collector to emitter voltage V
CE
(V)
5
4
3
C
C
0.2 mA
0.4
1.2
1.0
0.6
0.8
10,000
3,000
1,000
300
100
0.1
0.3
Collector current I
C
(A)
3
10
1.0
D
F
DC Current Transfer Ratio
vs. Collector Current
Ta=75
°
C
–25
°
C
25
°
C
V
= 3 V
Pulse
Saturation Voltage
vs. Collector Current
T
C
= 25
°
C
10
3
1.0
0.3
0.1
C
C
B
B
0.1
0.3
Collector current I
C
(A)
3
1.0
10
V
BE(sat)
V
CE(sat)
I
C
/
I
B
= 200
500
200
I
C
/
I
B
= 500
t
f
t
on
t
stg
V
CC
= 30V
I
C
B1
= –500 I
B2
Ta = 25
°
C
Switching Time vs. Collector Current
S
μ
s
10
3
1.0
0.3
0.1
0.03
0.01
0.3
Collector current I
C
(A)
0.1
1.0
3
10
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