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參數(shù)資料
| 型號(hào)： | 2SD669AG-B-AB3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 209K |
| 代理商： | 2SD669AG-B-AB3-R |
2SD669/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R204-005,F
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
180
V
2SD669
120
Collector-Emitter Voltage
2SD669A
VCEO
160
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Collector Peak Current
lC(PEAK)
3
A
Collector Power Dissipation
SOT-223
0.5
W
Collector Power Dissipation
TO-126
PD
1
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector to Base Breakdown Voltage
BVCBO
IC=1mA, IE=0
180
V
2SD669
120
Collector to Emitter Breakdown
Voltage
2SD669A
BVCEO
IC=10mA, RBE=∞
160
V
Emitter to Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
5
V
Collector Cut-off Current
ICBO
VCB=160V, IE=0
10
μA
hFE1
VCE=5V, IC=150mA (Note)
60
320
DC Current Gain
hFE2
VCE=5V, IC=500mA (Note)
30
Collector-Emitter Saturation Voltage
VCE(SAT) IC=600mA, IB=50mA (Note)
1
V
Base-Emitter Voltage
VBE
VCE=5V, IC=150mA (Note)
1.5
V
Current Gain Bandwidth Product
fT
VCE=5V, IC=150mA (Note)
140
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
14
pF
Note: Pulse test.
CLASSIFICATION OF hFE1
RANK
B
C
D
RANGE
60-120
100-200
160-320
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SD669AG-X-AA3B | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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