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參數(shù)資料
| 型號： | 2SD667CTZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 160K |
| 代理商： | 2SD667CTZ-E |
2SD667, 2SD667A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SD667
2SD667A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
120
—
120
—
V
IC = 10
A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
80
—
100
—
V
IC = 1 mA, RBE =
∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
5
—
V
IE = 10
A, IC = 0
Collector cutoff current
ICBO
—
10
—
10
A
VCB = 100 V, IE = 0
DC current transfer ratio
hFE1*
1
60
—
320
60
—
200
VCE = 5 V,
IC = 150 mA*
2
hFE2
30
—
30
—
VCE = 5 V,
IC = 500 mA*
2
Collector to emitter
saturation voltage
VCE(sat)
—
1
—
1
V
IC = 500 mA,
IB = 50 mA*
2
Base to emitter voltage
VBE
—
1.5
—
1.5
V
VCE = 5 V,
IC = 150 mA*
2
Gain bandwidth product
fT
—
140
—
140
—
MHz
VCE = 5 V,
IC = 150 mA*
2
Collector output
capacitance
Cob
—
12
—
12
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SD667
60 to 120
100 to 200
160 to 320
2SD667A
60 to 120
100 to 200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD667BTZ-E | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD668AB | 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD668B | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD668 | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD668D | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD667D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD667DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD667G-T9N-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN EPITAXIAL |
| 2SD667G-T9N-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SILICON NPN EPITAXIAL |
| 2SD668 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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