參數(shù)資料
型號(hào): 2SD667AB
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: TO-92MOD, 3 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 46K
代理商: 2SD667AB
2SD667, 2SD667A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD667
2SD667A
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
80
100
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
11A
Collector peak current
i
C(peak)
22A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD667
2SD667A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
120
120
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
80
100
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5—
5
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
10
10
AV
CB = 100 V, IE = 0
DC current transfer ratio h
FE1*
1
60
320
60
200
V
CE = 5 V,
I
C = 150 mA*
2
h
FE2
30
30
V
CE = 5 V,
I
C = 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
1
1VI
C = 500 mA,
I
B = 50 mA*
2
Base to emitter voltage
V
BE
1.5
1.5
V
CE = 5 V,
I
C = 150 mA*
2
Gain bandwidth product f
T
140
140
MHz
V
CE = 5 V,
I
C = 150 mA*
2
Collector output
capacitance
Cob
12
12
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by h
FE1 as follows.
2. Pulse test
BC
D
2SD667
60 to 120
100 to 200
160 to 320
2SD667A
60 to 120
100 to 200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD667ABTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SD667AC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-92VAR
2SD667ACTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial
2SD667B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR
2SD667BTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial