參數(shù)資料
型號(hào): 2SD592Q
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92-B1, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 446K
代理商: 2SD592Q
1998
Document No. D16157EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2425
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The
2SD2425
is
a
transistor
featuring
high
current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
New package with dimensions in between those of small
signal and power signal package
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1578
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
7.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT
7.5 cm
2
× 0.7 mm ceramic board mounted
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrode connection
1. Emitter
2. Collector
3.Base
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