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參數(shù)資料
| 型號(hào)： | 2SD401 |
| 廠商： | 永盛國際集團(tuán) |
| 英文描述： | SILICON EPITAXAL PLANAR TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 硅外延層平面晶體管（一般）的說明 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 64K |
| 代理商： | 2SD401 |
GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors
in a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
1.5
MAX
200
150
2
UNIT
V
V
A
A
W
V
V
T
mb
I
C
= 1.5A; I
B
= 0.15A
I
F
= 1.5A
25
20
1.5
2.0
-
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
MAX
200
150
5
2
0.5
20
150
150
UNIT
V
V
V
A
A
W
-
-
-
Tmb
25
-55
-
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=200V
V
EB
=5V
I
C
=1mA
I
C
= 1.5A; I
B
= 0.15A
I
C
= 500mA; V
CE
= 5V
I
C
= 0.5A; V
CE
= 12V
V
CB
= 10V
MIN
-
-
150
-
50
5
MAX
0.2
0.2
UNIT
mA
mA
V
V
1.5
250
-
75
MHz
pF
us
us
us
ELECTRICAL CHARACTERISTICS
TO-220
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
2SD401
SILICON EPITAXAL PLANAR TRANSISTOR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD476 | Silicon NPN Triple Diffused |
| 2SD476A | Silicon NPN Triple Diffused |
| 2SD476AK | Silicon NPN Triple Diffused |
| 2SD476K | Silicon NPN Triple Diffused |
| 2SD476 | Power Bipolar Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD401A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD401A NEC | 制造商:Distributed By MCM 功能描述:200V 2A 25W Bcec 2Sd401A Nec Transistor TO-220Ab |
| 2SD401A-AZ(L) | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SD401AK | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SD401A-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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