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參數(shù)資料
| 型號(hào)： | 2SD3030 |
| 英文描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 800V V(BR)CEO | 7A I(C) | TO-247VAR |
| 中文描述： | 晶體管|晶體管|達(dá)林頓|叩| 800V的五（巴西）總裁| 7A條一（c）|至247VAR |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | 2SD3030 |
2002
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2402 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
High current capacitance
Low collector saturation voltage
Complementary transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
6.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
8.0
A
Base current (DC)
I
B(DC)
0.2
A
Base current (pulse)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
0.4
A
Total power dissipation
P
T
16 cm
2
×
0.7 mm ceramic board mounted
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
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| 2SD3067 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHIGN, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
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| 2SD313_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD313_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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