參數(shù)資料
型號(hào): 2SD288O
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|晶體管|叩| 55V的五(巴西)總裁| 3A條一(c)| TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 3/9頁(yè)
文件大小: 39K
代理商: 2SD288O
2SC458 (LG), 2SC2310
3
Electrical Characteristics (Ta = 25°C)
2SC458 (LG)
2SC2310
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
55
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
50
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—5
——
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
0.5
0.5
AV
CB =18 V, IE = 0
Emitter cutoff current
I
EBO
0.5
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio h
FE*
1
100
500
100
320
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.2
0.2
V
I
C = 10 mA, IB = 1 mA
Base to emitter voltage
V
BE
0.67
0.75
0.67
0.75
V
CE = 12 V, IC = 2 mA
Gain bandwidth product f
T
230
230
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
1.8
3.5
1.8
3.5
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
3
5
3
5
dB
V
CE = 6 V, IC = 0.1 mA,
f = 120 Hz, R
g = 500
Small signal input
impedance
h
ie
16.5
16.5
k
V
CE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
h
re
70
——70
× 10–6
Small signal current
transfer ratio
h
fe
130
130
Small signal output
admittance
h
oe
11.0
11.0
S
Note:
1. The 2SC458 (LG) and 2SC2310 are grouped by h
FE as follows.
BC
D
2SC458 (LG) 100 to 200
160 to 320
250 to 500
2SC2310
100 to 200
160 to 320
相關(guān)PDF資料
PDF描述
2SD288R TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 3A I(C) | TO-220AB
2SD288Y TRANSISTOR | BJT | NPN | 55V V(BR)CEO | 3A I(C) | TO-220AB
2SD327 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92
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