參數(shù)資料
型號: 2SD2721
元件分類: 功率晶體管
英文描述: 12 A, 120 V, NPN, Si, POWER TRANSISTOR
封裝: TO-3PMLH, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 49K
代理商: 2SD2721
2SD2721
No. A0475-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Base-to-Emitterr Voltage
VBE
VCE=5V, IC=5A
1.5
V
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=5A, IB=0.5A
0.2
2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=5mA, IE=0A
160
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, RBE=∞
120
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=5mA, IC=0A
6
V
Turn-On Time
ton
See specified Test Circuit.
0.56
μs
Storage Time
tstg
See specified Test Circuit.
3.3
μs
Fall Time
tf
See specified Test Circuit.
0.4
μs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7504-001
16.0
3.4
12
3
21.0
5.0
22.0
0.8
20.4
4.0
2.0
2.8
2.1
5.45
0.7
0.9
3.5
8.0
5.6
3.1
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
VR
RB
VCC=50V
VBE= --5V
++
50Ω
INPUT
OUTPUT
RL=
10Ω
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
IC=10IB1= --10IB2=5A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
2
4
6
8
10
12
14
16
18
20
0123456789
10
0
IT13290
500mA
400mA
300mA
200mA
100mA
20mA
40mA
IB=0mA
0
1
2
3
4
5
6
7
8
IT13291
0
0.5
1.0
1.5
T
a=120
°C
25
°C
--40
°C
VCE=5V
60mA
80mA
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