參數(shù)資料
型號: 2SD2654
廠商: Rohm CO.,LTD.
英文描述: General Purpose Transistor (50V, 0.15A)
中文描述: 通用晶體管(50V的0.15A)
文件頁數(shù): 2/4頁
文件大?。?/td> 87K
代理商: 2SD2654
2SD2707
/
2SD2654
/
2SD2351
/
2SD2226K
/
2SD2227S
Transistors
z
Electrical characteristics
(Ta = 25
°
C)
Rev.A
2/3
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
60
50
12
820
Typ.
Max.
0.3
0.3
0.3
2700
Unit
V
V
V
μ
A
μ
A
V
Conditions
f
T
Cob
250
3.5
MHz
pF
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
50V
V
EB
=
12V
I
C
/I
B
=
50mA/5mA
V
CE
/I
C
=
5V/1mA
V
CE
=
5V, I
E
=
10mA, f
=
100MHz
V
CB
=
5V, I
E
=
0A, f
=
1MHz
Output capacitance
Measured using pulse current.
Transition frequency
Collector-emitter saturation voltage
DC current transfer ratio
Emitter cutoff current
Collector cutoff current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
z
Electrical characteristics curves
0
0
0.2
0.1
0.3
0.4
0.4
0.8
1.2
1.6
2.0
0.5
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics (
Ι
)
C
C
(
Ta=25
°
C
2.0
μ
A
1.8
μ
A
1.6
μ
A
1.4
μ
A
1.2
μ
A
1.0
μ
A
0.8
μ
A
0.6
μ
A
0.4
μ
A
0.2
μ
A
I
B
=0
0
8
4
12
16
40
80
120
160
200
0
20
0
0.4
0.2
0.2
0.5
0.6
0.8
1.0
1
2
5
20
10
50
100
200
1.4
1.2
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.3 Grounded emitter propagation
characteristics
C
C
(
V
CE
=5V
T0
°
C
2
°
C
2
°
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
ΙΙ
)
C
C
(
μ
A
500
μ
A
400
μ
A
350
μ
A
300
μ
A
250
μ
A
200
μ
A
150
μ
A
100
μ
A
50
μ
A
I
B
=0
C
Measured
0.2
1
2
5
0.5
10 20
50 100
10000
10
20
50
100
200
500
1000
2000
5000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (
Ι
)
D
F
°
C
Measured
V
CE
=10V
5V
3V
0.2
1
2
5
0.5
10 20
50 100
10000
5000
10
20
50
100
200
500
1000
2000
200
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs.
collector current (
ΙΙ
)
D
F
Measured
Ta=100
°
C
25
°
C
25
°
C
1
2
5
0.5
10 20
50 100
1000
1
0.2
2
5
10
20
50
100
200
500
200
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current (
Ι
)
C
C
Ta=25
°
C
I
C
/
I
B
=50
20
10
相關(guān)PDF資料
PDF描述
2SD288 NPN EPITAXIAL SILICON TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER)
2SD314 PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE
2SB508 PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE
2SD386 NPN Triple Diffused Planar Type Silicon Transistor For Vertical Deflection Output of Television
2SD387 NPN Triple Diffused Planar Type Silicon Transistor For Vertical Deflection Output of Television
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2654TLV 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD2654TLW 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN 50V 0.15A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SD2655WM-TL-E 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,50V,1A,MPAK 制造商:Renesas 功能描述:Trans GP BJT NPN 50V 1A 3-Pin MPAK T/R
2SD2656FRAT106 功能描述:NPN LOW VCE(SAT) TRANSISTOR (COR 制造商:rohm semiconductor 系列:汽車級,AEC-Q101 零件狀態(tài):在售 晶體管類型:NPN 電流 - 集電極(Ic)(最大值):1A 電壓 - 集射極擊穿(最大值):30V 不同?Ib,Ic 時的?Vce 飽和值(最大值):350mV @ 25mA,500mA 電流 - 集電極截止(最大值):100nA(ICBO) 不同?Ic,Vce?時的 DC 電流增益(hFE)(最小值):270 @ 100mA,2V 功率 - 最大值:200mW 頻率 - 躍遷:400MHz 工作溫度:150°C(TJ) 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應(yīng)商器件封裝:UMT3 標準包裝:1
2SD2656T106 功能描述:兩極晶體管 - BJT NPN 30V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2