參數(shù)資料
型號: 2SD2550
元件分類: 功率晶體管
英文描述: 4 A, 600 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-16E3A, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 501K
代理商: 2SD2550
2SD2550
2006-11-22
1
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SD2550
HORIZONTAL DEFLECTION OUTPUT FOR COLOR
TVs
High Voltage
: VCBO = 1700 V
Low Saturation Voltage
: VCE (sat) = 5.0 V (Max.)
High Speed
: tf = 0.6 μs (Max.)
Built-in Damper Type
Collector Metal (Fin) is Fully Covered with Mold Resin.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
1700
V
Collector-Emitter Voltage
VCEO
600
V
Emitter-Base Voltage
VEBO
5
V
DC
IC
4
Collector Current
Pulse
ICP
8
A
Base Current
IB
2
A
Collector Power Dissipation
PC
50
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
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