- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄246844 > 2SD2537T100 1200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2537T100 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 1200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | MPT3, SC-62, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | 2SD2537T100 |
1/2
www.rohm.com
c
2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.D
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
ROHM : MPT3
EIAJ : SC-62
2SD2537
(1) Base
(2) Collector
(3) Emitter
Medium Power Transistor (25V, 1.2A)
2SD2537
Features
Dimensions (Unit : mm)
1) High DC current gain.
2) High emitter-base voltage. (VEBO=12V)
3) Low saturation voltage.
(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
30
25
12
1.2
2
150
55 to +150
Unit
V
A (DC)
A (Pulse)
W
°C
1 Single pulse Pw
=10ms
2 When mounted on a 40×40×0.7mm ceramic board.
Storage temperature
Junction temperature
Collector current
Emitter-base voltage
Collector-emitter voltage
Collector-base voltage
Collector power dissipation
1
2
0.5
W
Packaging specifications and hFE
Type
2SD2537
MPT3
V
DV
T100
1000
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT
Cob
30
25
12
200
20
0.3
V
μA
V
820
1800
MHz
pF
IC
=10μA
IC
=1mA
IE
=10μA
VCB
=30V
VEB
=12V
IC/IB
=500mA/10mA
VCE/IC
=5V/0.5A
hFE
VCE
=10V, IE=50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
Output capacitance
Transition frequency
Collector-emitter saturation voltage
VBE(sat)
1.2
V
IC/IB
=0.5A/10mA
Base-emitter saturation voltage
Emitter cutoff current
Collector cutoff current
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
DC current transfer ratio
Measured using pulse current.
Electrical characteristics curves
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.1 Ground emitter output characteristics( )
0
0.4
0.8
1.2
1.6
2.0
0.1
0.2
0.3
0.4
0.5
0
Ta
=25°C
IB
=0
0.2
μA
0.4
μA
0.6
μA
0.8
μA
1.0
μA
1.2
μA
1.4
μA
1.6
μA
1.8
μA
2.0
μA
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Ground emitter output characteristics (
)
0
0.4
0.8
1.2
1.6
2.0
0.1
0.2
0.3
0.4
0.5
0
IB
=0
0.5mA
5.0mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
Ta
=25°C
Pulsed
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.3 Ground emitter propagation characteristics
0
1000
2000
200
500
100
20
50
10
2
5
0.6
0.4
0.2
1.0
0.8
1.2
1.4
Ta
=
100
°C
25
°C
25
°C
VCE
=5V
Pulsed
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1830-E | 2 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 2SB919-Q | 8 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB919-R | 8 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB919-S | 8 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SC2999-C | HF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2537T100V | 功能描述:兩極晶體管 - BJT NPN 25V 1.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2539 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2539306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2539LB306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2539LBK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。