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參數(shù)資料
| 型號： | 2SD2533 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 61K |
| 代理商： | 2SD2533 |
2
Power Transistors
2SD2523
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
Area of safe operation, horizontal operation ASO
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
100
80
60
40
20
90
70
50
30
10
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
(1)
(2)
(3)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
8
6
2
5
7
4
1
3
I
B
=1000mA
800mA
600mA
400mA
200mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=2
T
C
=100C
25C
–25C
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=2
Ta=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
V
CE
=5V
25C
–25C
T
C
=100C
F
F
0
2000
1600
400
1200
800
0
20
16
12
8
4
<1mA
f=15.75kHz, T
=25C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–2
10
–1
1
10
10
3
10
2
(1)
(2)
Note: R
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
×
0.3A (3W) and without heat sink
(2) P
T
=10V
×
1.0A (10W) and with a 100
×
100
×
2mm Al heat sink
Time t (s)
T
t
(
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