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參數(shù)資料
| 型號(hào)： | 2SD2492C |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-126FM, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 23K |
| 代理商： | 2SD2492C |
2SD2491, 2SD2492
2
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD2491
2SD2492
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
55
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
1.35
W
Collector power dissipation
P
C*
1
88
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
2SD2491
2SD2492
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
160
—
200
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
160
—
200
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
10
———A
V
CB = 140 V, IE = 0
——
———10
A
V
CB = 160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
—
320
60
—
320
V
CE = 5 V, IC = 10 mA
DC current transfer
ratio
h
FE2
30
—
30
—
V
CE = 5 V, IC = 1 mA
Base to emitter voltage V
BE
—
1.5
—
1.5
V
CE = 5 V, IC = 10 mA
Collector to emitter
saturation voltage
V
CE(sat)
——
2
——2
V
I
C = 30 mA, IB = 3 mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = 5 V, IC = 10 mA
Collector output
capacitance
Cob
—
3.8
—
3.8
—
pF
V
CB = 10 V, IE = 0
f = 1 MHz
Note:
1. The 2SD2491 and 2SD2492 are grouped by h
FE1 and its specification is as follows.
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