參數(shù)資料
型號(hào): 2SD2491D
元件分類: 功率晶體管
英文描述: 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
封裝: TO-126FM, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 23K
代理商: 2SD2491D
2SD2491, 2SD2492
2
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD2491
2SD2492
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
55
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
1.35
W
Collector power dissipation
P
C*
1
88
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
2SD2491
2SD2492
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
160
200
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
160
200
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—5
——V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
10
———A
V
CB = 140 V, IE = 0
——
———10
A
V
CB = 160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
320
60
320
V
CE = 5 V, IC = 10 mA
DC current transfer
ratio
h
FE2
30
30
V
CE = 5 V, IC = 1 mA
Base to emitter voltage V
BE
1.5
1.5
V
CE = 5 V, IC = 10 mA
Collector to emitter
saturation voltage
V
CE(sat)
——
2
——2
V
I
C = 30 mA, IB = 3 mA
Gain bandwidth product f
T
140
140
MHz
V
CE = 5 V, IC = 10 mA
Collector output
capacitance
Cob
3.8
3.8
pF
V
CB = 10 V, IE = 0
f = 1 MHz
Note:
1. The 2SD2491 and 2SD2492 are grouped by h
FE1 and its specification is as follows.
相關(guān)PDF資料
PDF描述
2SD2491C 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
2SD2491B 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
2SD2491C 0.1 A, 160 V, NPN, Si, POWER TRANSISTOR
2SD2492B 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR
2SD2492 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR
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