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參數資料
| 型號： | 2SD2491C |
| 英文描述： | TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|叩| 160V五（巴西）總裁| 100mA的一（c）|至126 |
| 文件頁數： | 2/6頁 |
| 文件大小： | 112K |
| 代理商： | 2SD2491C |
Data Sheet D16155EJ2V0DS
2
2SD2402
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 50 V, I
E
= 0
100
nA
Emitter cutoff current
I
EBO
V
EB
= 6.0 V, I
C
= 0
100
nA
DC current gain
h
FE1
V
CE
= 1.0 V, I
C
= 1.0 A
80
DC current gain
h
FE2
V
CE
= 1.0 V, I
C
= 2.0 A
100
200
400
DC base voltage
V
BE
V
CE
= 1.0 V, I
C
= 0.1 A
600
650
700
mV
Collector saturation voltage
V
CE(sat)1
I
C
= 3.0 V, I
B
= 0.15 A
140
300
mV
Collector saturation voltage
V
CE(sat)2
I
C
= 5.0 V, I
B
= 0.25 A
230
500
mV
Base saturation voltage
V
BE(sat)
I
C
= 3.0 V, I
B
= 0.15 A
0.88
1.2
V
Gain bandwidth product
f
T
V
CE
= 10 V, I
E
=
0.5 A
170
MHz
Output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
60
pF
Turn-on time
t
on
275
ns
Storage time
t
stg
485
ns
Fall time
t
f
I
C
= 2.0 A, V
CC
= 10 V
I
B1
=
I
B2
= 0.1 A
R
L
= 500
45
ns
h
FE
CLASSIFICATION
Marking
h
FE2
EX
EY
EZ
100 to 200
160 to 320
200 to 400
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