參數(shù)資料
型號: 2SD2486Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: TO-220, FULL PACK-3
文件頁數(shù): 2/3頁
文件大小: 167K
代理商: 2SD2486Q
2
Power Transistors
2SD2486
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
30
25
20
15
10
5
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) With a 50
× 50 × 2mm
Al heat sink
(4) Without heat sink
(P
C=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
012
10
8
26
4
0
3.0
2.5
2.0
1.5
1.0
0.5
I
B=5.0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
4.0mA
T
C=25C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=40
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=40
T
C=–25C
25C
100C
Collector current I
C
(A)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE=2V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE=10V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
05
4
13
2
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=40 (IB1=–IB2)
V
CC=50V
T
C=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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