參數(shù)資料
型號: 2SD2385-B
元件分類: 功率晶體管
英文描述: 8 A, 140 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/4頁
文件大?。?/td> 179K
代理商: 2SD2385-B
2SD2385
2006-11-21
3
Collector-emitter voltage VCE (V)
IC – VCE
C
ollect
or
c
urre
nt
I C
(
A
)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
0
4
8
1
2
3
4
Common emitter
VCE = 5 V
5
2
6
10
Tc = 25°C
25
100
hFE – IC
D
C
c
urre
nt
ga
in
h
FE
Collector current IC (A)
100000
300
0.03
Common emitter
VCE = 5 V
500
1000
3000
5000
10000
30000
50000
0.05
0.3 0.5
1
5
Tc = 100°C
25
0.1
3
10
50
100
Ambient temperature Ta (°C)
PC – Ta
C
ollec
tor
po
wer
dis
si
pati
on
P
C
(W
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(A
)
0
20
Tc = Ta Infinite heat sink
60
120
25
50
75
100
125
175
150
40
80
140
100
10
30
50
100
0.3
5
20
0.5
1
3
5
10
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
10 ms*
100 ms*
DC operation
Tc = 25°C
300
VCEO
max
0
4
8
2
4
6
8
IB = 100 A
500
300
200
150
Common emitter
Tc = 25°C
10
2
6
10
250
350
400
450
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
0.3
5
0.03 0.05
0.3 0.5
1
5
0.1
3
10
Tc = 25°C
100
25
Common emitter
IC/IB = 250
1
0.5
3
0.03
0.1
0.05
相關PDF資料
PDF描述
2SD2387-C 8 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2387C 8 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2387B 8 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2389 8 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3P
2SD2390 10 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3P
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