參數(shù)資料
型號(hào): 2SD2383
元件分類: 小信號(hào)晶體管
英文描述: 20 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/4頁
文件大?。?/td> 79K
代理商: 2SD2383
1998
Document No. D16154EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2383
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2383 is an element realizing high voltage in small
dimension. This transistor is ideal for downsizing sets requiring
high voltage.
FEATURES
High voltage
Small dimension
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
400
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
5.0
V
Collector current (DC)
ID(DC)
20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrode connection
1. Emitter
2. Base
3. Collector
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