- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48159 > 2SD2276S (PANASONIC CORP) 8 A, 140 V, NPN, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SD2276S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3L-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 204K |
| 代理商： | 2SD2276S |
Power Transistors
1
Publication date: September 2003
SJD0025
9BED
2SD2276
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB1503
■ Features
Optimum for 110 W Hi-Fi output
High forward current transfer ratio h
FE
Low collector-emitter saturation voltage V
CE(sat)
■ Absolute Maximum Ratings T
C = 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
160
V
Collector-emitter voltage (Base open)
VCEO
140
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
8A
Peak collector current
ICP
15
A
Collector power
PC
120
W
dissipation
Ta = 25°C
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 30 mA, I
B
= 0
140
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 160 V, IE = 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 140 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 50 V, I
C
= 0
100
A
Forward current transfer ratio
hFE1
VCE = 5 V, IC = 1 A
2 000
hFE2 *
VCE = 5 V, IC = 7 A
5 000
30 000
Collector-emitter saturation voltage
VCE(sat)
IC
= 7 A, I
B
= 7 mA
2.5
V
Base-emitter saturation voltage
VBE(sat)
IC = 7 A, IB = 7 mA
3.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC
= 7 A, I
B1
= 7 mA, I
B2
= 7 mA,
2.0
s
Storage time
tstg
VCC = 50 V
6.0
s
Fall time
tf
1.2
s
20.0±0.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
123
26.0
±
0.5
(10.0)
(2.5)
Solder
Dip
(6.0)
(4.0)
(2.0)
(1.5)
20.0
±
0.5
5.0±0.3
φ 3.3±0.2
(1.5)
2.7±0.3
0.6±0.2
(3.0)
(2.0)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
S
P
hFE2
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
Internal Connection
B
C
E
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2281-Q | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2281-R | 12 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2352 | 2 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2670TL | 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2678T100 | 3000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2279 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP |
| 2SD2279P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP |
| 2SD2279Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP |
| 2SD2280 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Current Switching Applications |
| 2SD2280Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7A I(C) | TO-247VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復。