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參數(shù)資料
| 型號： | 2SD2266O |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | MT4, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 189K |
| 代理商： | 2SD2266O |
Power Transistors
2
2SD2266
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Cob VCB
ton, tstg, tf IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C=Ta
(2) Without heat sink
(P
C=2.0W)
(1)
(2)
Ambient temperature T
a
(C)
Collector
power
dissipation
P
C
(W
)
08
26
47
15
3
0
4
3
1
2
I
B=40mA
T
C=25C
35mA
30mA
25mA
20mA
15mA
10mA
5mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
04
13
2
0
6
5
4
3
2
1
V
CE=4V
T
C=–25C
25C
100C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
10
102
103
104
V
CE=4V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
1
10
100
1000
V
CE=12V
f=10MHz
T
C=25C
Collector current I
C
(A)
Transition
frequency
f
T
(MHz
)
1
10
100
1000
3
30
300
1
10
100
1000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
08
26
47
15
3
0.01
0.1
1
10
100
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=10 (IB1=–IB2)
V
CC=50V
T
C=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching
time
t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
t=1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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