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參數(shù)資料
| 型號： | 2SD2250P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 7 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3L-A1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 214K |
| 代理商： | 2SD2250P |
2SD2250
2
SJD00257BED
VCE(sat) IC
hFE IC
Cob VCB
PC Ta
IC VCE
VBE(sat) IC
ton, tstg, tf IC
Safe operation area
0
160
40
120
80
50
150
100
200
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 100
×100×2mm
Al heat sink
(3)Without heat sink
(PC=3.5W)
(1)
(3)
(2)
0
12
10
8
6
4
2
012
48
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
IB=5mA
TC=25C
1mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.1
100
10
1
0.1
1
10
100
Base-emitter
saturation
voltage
V
BE(sat)
(V)
Collector current I
C (A)
IC/IB=1000
TC=–25C
100C
25C
0.1
1
10
100
0.1
100
10
1
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
IC/IB=1000
TC=100C
25C
–25C
0.01
0.1
1
10
102
103
104
105
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
VCE=5V
25C
–25C
TC=100C
1
10
100
1
1 000
100
10
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
IE=0
f=1MHz
TC=25C
0.01
0.1
1
10
100
016
412
8
Turn-on
time
t
on
,
Storage
time
t
stg
,
Fall
time
t
f
(
s)
Collector current I
C (A)
Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000(IB1=–IB2)
VCC=50V
TC=25C
tstg
tf
ton
0.01
1
0.1
1
10
100
10
100
1 000
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
t=10ms
t=1ms
DC
ICP
IC
Non repetitive pulse
TC=25C
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|---|---|
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