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參數(shù)資料
| 型號(hào)： | 2SD2250 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 中文描述： | 7 A, 140 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TOP-3L-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 57K |
| 代理商： | 2SD2250 |
2
Power Transistors
2SD2250
P
C
— Ta
I
C
— V
CE
V
BE(sat)
— I
C
V
CE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
200
150
50
100
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.5W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
12
10
8
6
4
2
I
B
=5mA
T
C
=25C
1mA
0.8mA
0.7mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
Collector to emitter voltage V
CE
(V)
C
C
0.1
1
10
100
0.3
Collector current I
C
(A)
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=1000
T
C
=–25C
100C
25C
B
B
0.1
1
10
100
0.3
Collector current I
C
(mA)
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=1000
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=5V
25C
–25C
T
C
=100C
F
F
1
3
10
30
100
1
1000
100
10
3
30
300
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
0
16
4
12
8
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=1000 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
C
C
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| 2SD2250Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 7A I(C) | TO-247VAR |
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