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參數(shù)資料
| 型號(hào)： | 2SD2240AS |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 185 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-75, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SD2240AS |
1
Transistor
2SD2240, 2SD2240A
Silicon NPN epitaxial planer type
For high breakdown voltage low-frequency and low-noise
amplification
s Features
q
High collector to emitter voltage VCEO.
q
Low noise voltage NV.
q
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC–75
3:Collector
SS–Mini Type Package
1.6
±0.15
1.6
±0.1
1.0
±0.1
0.75
±0.15
0.45
±0.1
0.5
0.3
0
to
0.1
0.5
0.8
±0.1
0.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2
±0.1
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
150
185
150
185
5
100
50
125
–55 ~ +125
Unit
V
mA
mW
C
2SD2240
2SD2240A
2SD2240
2SD2240A
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
ICBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
NV
Conditions
VCB = 100V, IE = 0
IC = 100A, IB = 0
IE = 10A, IC = 0
VCE = 5V, IC = 10mA
IC = 30mA, IB = 3mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
150
185
5
130
typ
150
2.3
150
max
1
330
1
Unit
A
V
MHz
pF
mV
2SD2240
2SD2240A
*1h
FE1 Rank classification
Rank
R
S
hFE
130 ~ 220
185 ~ 330
2SD2240
PR
PS
2SD2240A
LR
LS
Marking
Symbol
Marking symbol :
P(2SD2240)
L(2SD2240A)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2240JRL | 功能描述:TRANS NPN 150VCEO 50MA SSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2240R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 |
| 2SD2240S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 |
| 2SD2241 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS) |
| 2SD2241(Q) | 制造商:Toshiba 功能描述:NPN 100V 4A 2000 TO220NIS Bulk |
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