參數(shù)資料
型號: 2SD2213
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial, Darlington
中文描述: npn型硅外延,達林頓
文件頁數(shù): 2/6頁
文件大?。?/td> 32K
代理商: 2SD2213
2SD2213
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
ic
(peak)
P
C
Tj
150
V
Collector to emitter voltage
80
V
Emitter to base voltage
8
V
Collector current
1.5
A
Collector peak current
3
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
E to C diode forward current
I
D
1.5
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
V
I
C
= 10 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
8
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
h
FE
h
FE
V
CE(sat)
5.0
μ
A
μ
A
V
CB
= 120 V, I
E
= 0
V
CE
= 65 V, I
E
=
V
CE
= 2 V, I
C
= 0.15 A*
1
V
CE
= 2 V, I
C
= 1 A*
1
V
CE
= 2 V, I
C
= 1.5 A*
1
I
C
= 1 A*
1
, I
B
= 1 mA
5.0
DC current transfer ratio
2000
5000
30000
1000
Collector to emitter saturation
voltage
1.5
V
Base to emitter saturation
voltage
V
BE(sat)
2.0
V
I
C
= 1 A*
1
, I
B
= 1 mA
E to C diode forward voltage
Note:
1. Pulse test
V
D
3.0
V
I
D
= 1.5 A*
1
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