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參數(shù)資料
| 型號(hào)： | 2SD2211 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Power Transistor(功率晶體管) |
| 中文描述： | 功率晶體管（功率晶體管） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SD2211 |
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!
Features
1) High breakdown voltage.(BV
CEO
=
160V)
2) Low collector output capacitance.
(Typ. 20pF at V
CB
=
10V)
3) High transition frequency.(f
T
=
80MH
Z
)
4) Complements the 2SB1275 / 2SB1236A.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
160
160
5
1.5
3
1
2
1
10
150
55
～+
150
Unit
V
V
V
A(DC)
A(Pulse)
W
2
3
1
W
W(Tc
=
25
°
C)
2SD1857A
2SD2211
2SD1918
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=
100ms
2
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger
.
3
When mounted on a 40 x 40 x 0.7mm ceramic board.
!
Packaging specifications and h
FE
Type
Package
h
FE
Marking
2SD2211
MPT3
QR
DQ*
T100
1000
2SD1918
CPT3
Q
TL
2500
2SD1857A
ATV
PQ
TV2
2500
Denotes h
FE
Code
Basic ordering unit (pieces)
*
!
External dimensions
(Units : mm)
ROHM : MPT3
EIAJ : SC-62
EIAJ : SC-63
ROHM : CPT3
ROHM : ATV
2SD1857A
2SD1918
2SD2211
1
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
0
1
0
1
0
3
0
1
(3)
4
(1)
(2)
0.5
4.0
2.5
1.0
0.45
(3) Base
1.05
Taping specifications
(2) Collector
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
2
0
1
0
9.5
2.5
0.8Min.
1.5
6
2
(
(
C0.5
0
0.9
(
0
2
0
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
5
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
160
160
5
120
80
20
1
1
2
390
V
V
V
μ
A
μ
A
V
h
FE
82
270
2SD2211,2SD1918
2SD1857A
MHz
pF
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
120V
V
EB
=
4V
I
C
/I
B
=
1A/0.1A
V
BE(sat)
1.5
V
I
C
/I
B
=
1A/0.1A
V
CE
/I
C
=
5V/0.1A
V
CE
=
5V , I
E
=
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Measured using pulse current.
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2211N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SD2211P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SD2211Q | 制造商:ROHM 制造商全稱:Rohm 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SD2211T100Q | 功能描述:兩極晶體管 - BJT DVR NPN 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2211T100R | 功能描述:兩極晶體管 - BJT DVR NPN 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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