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參數(shù)資料
| 型號： | 2SD2170 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Medium Power Transistor(Motor, Relay drive) (90 , 2A) |
| 中文描述： | 中等功率晶體管（電機(jī)，繼電器驅(qū)動器）（90，第2A） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 2SD2170 |
2SD2170
Transistors
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
2SD2170
!
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!
External dimensions
(Units : mm)
(3) Emitter(Source)
(2) Collector(Drain)
EIAJ : SC-62
1
0
1
0
1
0
3
0
1
(3)
4
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
90
90
6
2
3
2
150
55~+150
+20
10
+20
10
*
1
*
2
Unit
V
V
V
A (DC)
A (Pulse)
W
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
1 Single pulse Pw = 10ms , Duty = 1 / 2
*
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
!
Packaging specifications and h
FE
!
Circuit diagram
Type
Package
h
FE
Marking
2SD2170
MPT3
1k~10k
DM
T100
1000
Code
Basic ordering unit (pieces)
R
2
R
1
E
B
C
C
B
E
: Emitter
: Base
: Collector
R
1
3.5k
R
2
300
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
Min.
80
80
-
-
-
Typ.
-
-
-
-
-
Max.
110
110
10
3
1.5
Unit
V
V
μ
A
mA
V
Conditions
h
FE
f
T
Cob
1000
-
-
-
80
25
10000
-
-
-
*
1
*
2
*
1
MHz
pF
I
C
= 50
μ
A
I
C
= 1mA
V
CB
= 70V
V
EB
= 5V
I
C
/I
B
= 1A/1mA
V
CE
= 2V , I
C
= 1A
V
CE
= 5V , I
E
=
0.1A , f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1 Measured using pulse current.
*
2 Transition frequency of the device.
+
20
10
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| 2SD2170T100 | 功能描述:達(dá)林頓晶體管 NPN 90V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD2171S | 制造商:ROHM 制造商全稱:Rohm 功能描述:MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A) |
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| 2SD2171SV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1.2A I(C) | SPAK |
| 2SD2171SW | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1.2A I(C) | SPAK |
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