參數(shù)資料
型號: 2SD2167T100/N
元件分類: 小信號晶體管
英文描述: Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù): 1/1頁
文件大?。?/td> 54K
代理商: 2SD2167T100/N
2SD2167
Transistors
1/1
Power Transistor (31
±4V, 2A)
2SD2167
!
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) PC
=2 W (on 40×40×0.7mm ceramic board)
!
External dimensions (Units : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
!
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
31
±4
31
±4
5
2
0.5
2
150
55 +150
Unit
V
A(DC)
3
2
1
A(Pulse)
W
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1 Pw
=20ms , duty=1 / 2
2 When mounted on a 40
× 40 × 0.7 mm ceramic board.
!
Packaging specifications and hFE
Type
2SD2167
MPT3
NPQ
T100
DL
1000
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Denotes hFE
!
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
27
5
56
100
25
35
1
270
V
A
V
MHz
pF
IC
= 50A
IC
= 1mA
IE
= 50A
VCB
= 20V
VEB
= 5V
IC/IB
= 2A/0.2A
0.25
0.5
V
IC/IB
= 1A/50mA
VCE/IC
= 3V/0.5A
VCE
= 3V , IE = 0.5A , f= 30MHz
VCB
= 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
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