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參數(shù)資料
| 型號(hào)： | 2SD2164-K |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SD2164-K |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D15606EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD2164 is a single power transistor developed especially
for high hFE. This transistor is ideal for simplifying drive circuits and
reducing power dissipation because its hFE is as high as that of
Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated
package, thus contributing to high-density mounting and mounting
cost reduction.
FEATURES
High hFE and low VCE(sat):
hFE
1,300 TYP. (VCE = 5.0 V, IC = 0.5 A)
VCE(SAT)
0.3 V TYP. (IC = 2.0 A, IB = 20 mA)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
3.0
A
Collector current (pulse)
IC(pulse)
5.0
Note
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
PT (TC = 25
°C)
20
W
Total power dissipation
PT (TA = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note PW
≤ 300
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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相關(guān)PDF資料 |
PDF描述 |
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| 2SD2164-AZ | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2164 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2171STPV | 1200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2178R | 2 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SD2178S | 2 A, 50 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2164L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2165 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2165-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT NPN 100V 6A 3-Pin(3+Tab) TO-220 Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN PWR Transistor,100V,6.0A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT NPN 100V 6A 3-Pin(3+Tab) TO-220 Isolated |
| 2SD2165AZ-K | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Bulk |
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