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參數(shù)資料
| 型號(hào)： | 2SD2164-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SD2164-AZ |
2SC380TM
2003-03-27
2
y Parameters (typ.)
(1)
(common emitter f = 455 kHz, Ta = 25°C)
Characteristics
Symbol
2SC380TM-R
2SC380TM-O
2SC380TM-Y
Unit
Collector-emitter voltage
VCE
6
V
Emitter current
IE
-1
mA
Input conductance
gie
0.58
0.41
0.26
mS
Input capacitance
Cie
53
46
38
pF
Output conductance
goe
1.9
2.7
4.8
mS
Output capacitance
Coe
2.6
2.8
3.6
pF
Forward transfer admittance
yfe
38
mS
Phase angle of forward transfer
admittance
qfe
-0.79
-0.83
-0.92
°
Reverse transfer admittance
yre
5.7
6.2
mS
Phase angle of reverse transfer
admittance
qre
-90
°
(2)
(common emitter f = 10.7 MHz, Ta = 25°C)
Characteristics
Symbol
2SC380TM-R
2SC380TM-O
2SC380TM-Y
Unit
Collector-emitter voltage
VCE
6
V
Emitter current
IE
-1
mA
Input conductance
gie
1.04
0.85
0.65
mS
Input capacitance
Cie
49
43
36
pF
Output conductance
goe
10
15
28
mS
Output capacitance
Coe
2.7
2.9
3.6
pF
Forward transfer admittance
yfe
37
mS
Phase angle of forward transfer
admittance
qfe
-9.6
-10.4
-11.5
°
Reverse transfer admittance
yre
120
140
mS
Phase angle of reverse transfer
admittance
qre
-90
°
Figure 1
Gpe Test Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2164-AZ-L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2164K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2164M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR |
| 2SD2165 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
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