參數(shù)資料
型號(hào): 2SD2162-K
元件分類: 功率晶體管
英文描述: 8 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, ISOLATED TO-220, FULL PACK-3
文件頁數(shù): 2/6頁
文件大小: 112K
代理商: 2SD2162-K
Data Sheet D14865EJ2V0DS
2
2SD2162
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0 A
1.0
A
hFE1
VCE = 2.0 V, IC = 3.0 A
Note
2,000
15,000
DC current gain
hFE2
VCE = 2.0 V, IC = 5.0 A
Note
500
Collector saturation voltage
VCE(sat)
IC = 3.0 A, IB = 3.0 mA
Note
0.9
1.5
V
Base saturation voltage
VBE(sat)
IC = 3.0 A, IB = 3.0 mA
Note
1.6
2.0
V
Gain bandwidth product
fT
VCE = 5.0 V, IC = 0.8 A
30
MHz
Collector capacitance
Cob
VCB = 10 V, IE = 0 A, f = 1.0 MHz
50
pF
Turn-on time
ton
1.0
s
Storage time
tstg
3.5
s
Fall time
tf
IC = 3.0 A, RL = 16.7
,
IB1 =
IB2 = 3.0 mA, VCC 50 V
Refer to the test circuit.
1.2
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
3,000 to 7,000
5,000 to 15,000
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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相關(guān)PDF資料
PDF描述
2SD2162-M 8 A, 100 V, NPN, Si, POWER TRANSISTOR
2SD2162-K 8 A, 100 V, NPN, Si, POWER TRANSISTOR
2SD2163-J 10 A, 100 V, NPN, Si, POWER TRANSISTOR
2SD2166/Q 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP
2SD2166C6/QR 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126FP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2162M 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-220VAR
2SD2163 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
2SD2163-AZ-J 制造商:Renesas Electronics Corporation 功能描述:Trans Darlington NPN 100V 10A 3-Pin(3+Tab) TO-220 Isolated
2SD2163J 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220
2SD2163K 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220