參數(shù)資料
型號(hào)： 2SD2161M
廠商： NEC Corp.
英文描述： TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR
中文描述： 晶體管|晶體管|達(dá)林頓|叩| 100V的五（巴西）總裁| 5A條一（c）|至220VAR
文件頁數(shù)： 2/6頁
文件大?。?/td> 130K
代理商： 2SD2161M
Data Sheet D14864EJ2V0DS
2
2SD2161
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= 100 V, I
E
= 0 A
1.0
μ
A
h
FE1
V
CE
= 2.0 V, I
C
= 2.0 A
Note
2,000
8,000
20,000
DC current gain
h
FE2
V
CE
= 2.0 V, I
C
= 4.0 A
Note
500
Collector saturation voltage
V
CE(sat)
I
C
= 2.0 A, I
B
= 2.0 mA
Note
1.5
V
Base saturation voltage
V
BE(sat)
I
C
= 2.0 A, I
B
= 2.0 mA
Note
2.0
V
Gain bandwidth product
f
T
V
CE
= 5.0 V, I
C
= 0.5 A
30
MHz
Collector capacitance
C
ob
V
CB
= 10 V, I
E
= 0 A, f = 1.0 MHz
35
pF
Turn-on time
t
on
1.0
μ
s
Storage time
t
stg
3.5
μ
s
Fall time
t
f
I
C
= 2.0 A, R
L
= 25
,
I
B1
=
I
B2
= 2.0 mA, V
CC
50 V
Refer to the test circuit.
1.2
μ
s
Note
Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SD2162 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON POWER TRANSISTOR
2SD2162-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Darlington Transistor,100V,8A,TO220F 制造商:Renesas 功能描述:Trans Darlington NPN 100V 8A 3-Pin(3+Tab) TO-220
2SD2162-AZ(L) 制造商:Renesas Electronics 功能描述:NPN Bulk
2SD2162M 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 8A I(C) | TO-220VAR
2SD2163 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
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