參數(shù)資料
型號(hào): 2SD2157P
廠(chǎng)商: PANASONIC CORP
元件分類(lèi): 功率晶體管
英文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: TO-220, FULL PACK-3
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 180K
代理商: 2SD2157P
2
Power Transistors
2SD2157, 2SD2157A
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
Cob —VCB
Area of safe operation (ASO)
Rth(t) —t
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(W
)
010
8
26
4
0
10
8
6
4
2
I
B=4.0mA
T
C=25C
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
03.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE=3V
T
C=100C
–25C
25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=250
T
C=100C
25C
–25C
Collector current I
C
(A)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
102
103
104
105
V
CE=3V
T
C=100C
25C
–25C
Collector current I
C
(A)
Forward
current
transfer
ratio
h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25C
10ms
t=1ms
DC
2SD2157
2SD2157A
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(A
)
10–4
10
10–3
10–1
10–2
1103
102
104
0.1
1
10
100
10000
1000
Note: R
th was measured at Ta=25C and under natural convection.
(1) P
T=10V × 0.2A (2W) and without heat sink
(2) P
T=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
Time t (s)
Thermal
resistance
R
th
(t)
(C/W
)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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