參數(shù)資料
型號(hào): 2SD2151
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN epitaxial planar type(For power switching)
中文描述: 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 54K
代理商: 2SD2151
2
Power Transistors
2SD2151
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
40
30
10
20
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=2W)
(1)
(3)
(2)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
20
16
12
8
4
T
C
=25C
I
B
=400mA
250mA
200mA
160mA
120mA
100mA
80mA
60mA
40mA
20mA
Collector to emitter voltage V
CE
(V)
C
C
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=10
T
C
=100C
25C
–25C
Collector current I
C
(A)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
T
C
=–25C
25C
100C
I
C
/I
B
=10
B
B
0.1
30
10
1
0.3
Collector current I
C
(A)
3
1
3
10
30
100
300
1000
V
CE
=2V
T
C
=100C
25C
–25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
=10V
f=1MHz
T
C
=25C
T
T
0
8
2
6
4
7
1
Collector current I
C
(A)
5
3
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
C
C
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2SD2152Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92
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